1N6121A
vs
P6KE43HB0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
40.9 V
38.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
E-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
32.7 V
34.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
1
Rohs Code
Package Description
O-PALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
47.3 V
Breakdown Voltage-Nom
43 V
Case Connection
ISOLATED
Clamping Voltage-Max
61.9 V
JEDEC-95 Code
DO-204AC
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Reference Standard
AEC-Q101; UL RECOGNIZED
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
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