1N6120A vs SMAJ11 feature comparison

1N6120A Bkc Semiconductors Inc

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SMAJ11 General Instrument Corp

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer BKC SEMICONDUCTORS INC GENERAL INSTRUMENT CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 35.1 V 12.2 V
Breakdown Voltage-Nom 39 V
Case Connection ISOLATED
Clamping Voltage-Max 56.2 V 20.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 29.7 V 11 V
Reverse Current-Max 1 µA 5 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 11 45
Package Description R-PDSO-C2
Breakdown Voltage-Max 14.9 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

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