1N6116US
vs
JAN1N6116US
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
HERMETIC SEALED, GLASS, D-5B, E-MELF-2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
21 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Breakdown Voltage-Min |
24.42 V
|
25.7 V
|
| Breakdown Voltage-Nom |
27 V
|
27 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
39.1 V
|
39.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-MELF-R2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2 W
|
5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
20.6 V
|
20.6 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
5
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
|
|
|
Compare 1N6116US with alternatives
Compare JAN1N6116US with alternatives