1N6116
vs
1N6116
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
24.3 V
25.7 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
30
20
Package Description
HERMETIC SEALED, GLASS, E PACKAGE-2
Factory Lead Time
21 Weeks
Samacsys Manufacturer
Microchip
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
27 V
Clamping Voltage-Max
39.1 V
JESD-609 Code
e0
Rep Pk Reverse Voltage-Max
20.6 V
Terminal Finish
TIN LEAD
Compare 1N6116 with alternatives
Compare 1N6116 with alternatives