1N6114A
vs
JAN1N6114A
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
20.9 V
|
20.9 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
16.7 V
|
17 V
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Base Number Matches |
11
|
9
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
22 V
|
| Case Connection |
|
ISOLATED
|
| Clamping Voltage-Max |
|
30.5 V
|
| JESD-30 Code |
|
O-XALF-W2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max |
|
3 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500/516
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|