1N6111
vs
JANTXV1N6107A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
14.4 V
9.9 V
Breakdown Voltage-Nom
16 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
23.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
12.2 V
8.4 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
9
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Additional Feature
HIGH RELIABILITY
Power Dissipation-Max
3 W
Reference Standard
MIL-19500/516