1N6105 vs 1N6150A feature comparison

1N6105 Microsemi Corporation

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1N6150A Microsemi Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS, E PACKAGE-2 HERMETIC SEALED, GLASS, C PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 8.65 V 20.9 V
Breakdown Voltage-Nom 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 6.9 V 16.7 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 29 18
Samacsys Manufacturer Microsemi Corporation
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C

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