1N6101
vs
PMEG6010ETR
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Forward Voltage-Max (VF) |
1 V
|
0.53 V
|
| JESD-609 Code |
e0
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Power Dissipation-Max |
0.4 W
|
0.68 W
|
| Rep Pk Reverse Voltage-Max |
65 V
|
60 V
|
| Reverse Current-Max |
0.025 µA
|
60 µA
|
| Reverse Recovery Time-Max |
0.005 µs
|
0.0044 µs
|
| Reverse Test Voltage |
20 V
|
60 V
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Pure Tin (Sn)
|
| Base Number Matches |
8
|
2
|
| HTS Code |
|
8541.10.00.80
|
| Application |
|
EFFICIENCY
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
RECTIFIER DIODE
|
| JESD-30 Code |
|
R-PDSO-F2
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Number of Elements |
|
1
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Output Current-Max |
|
1 A
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
AEC-Q101; IEC-60134
|
| Technology |
|
SCHOTTKY
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N6101 with alternatives