1N60PG-T92-K
vs
1N60PL-T92-B
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
1.2 A
|
1.2 A
|
Drain-source On Resistance-Max |
11.5 Ω
|
11.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
4 pF
|
4 pF
|
JEDEC-95 Code |
TO-92
|
TO-92
|
JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
1 W
|
1 W
|
Power Dissipation-Max (Abs) |
1 W
|
1 W
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare 1N60PG-T92-K with alternatives
Compare 1N60PL-T92-B with alternatives