1N6052AE3/TR vs 1.5KE36C feature comparison

1N6052AE3/TR Microchip Technology Inc

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1.5KE36C Taiwan Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN GREEN, PLASTIC PACKAGE-2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 21 Weeks 8 Weeks
Breakdown Voltage-Max 37.8 V 39.6 V
Breakdown Voltage-Min 34.2 V 32.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA DO-201
JESD-30 Code O-MALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Rep Pk Reverse Voltage-Max 30 V 29.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 26
Rohs Code Yes
Breakdown Voltage-Nom 36 V
Clamping Voltage-Max 52 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

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