1N6052A vs JANTXV1N6052A feature comparison

1N6052A Silicon Transistor Corporation

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JANTXV1N6052A Semicon Components Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SILICON TRANSISTOR CORP SEMICON COMPONENTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 37.8 V 37.8 V
Breakdown Voltage-Min 34.2 V 34.2 V
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 1
Rohs Code No
Breakdown Voltage-Nom 36 V
Clamping Voltage-Max 49.9 V
JESD-609 Code e0
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/507
Reverse Current-Max 5 µA
Terminal Finish TIN LEAD

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Compare JANTXV1N6052A with alternatives