1N6052A vs 1N6052A feature comparison

1N6052A Silicon Transistor Corporation

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1N6052A Semicon Components Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SILICON TRANSISTOR CORP SEMICON COMPONENTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 37.8 V
Breakdown Voltage-Min 34.2 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13
JESD-30 Code O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 4 4
Rohs Code No
Breakdown Voltage-Nom 36 V
Clamping Voltage-Max 49.9 V
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)

Compare 1N6052A with alternatives

Compare 1N6052A with alternatives