1N6050AE3 vs 1N6050A feature comparison

1N6050AE3 Microsemi Corporation

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1N6050A Semitronics Corp

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Rohs Code Yes
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer MICROSEMI CORP SEMITRONICS CORP
Package Description O-MALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 31.5 V
Breakdown Voltage-Min 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED
Clamping Voltage-Max 41.4 V 41.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA
JESD-30 Code O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material METAL
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Rep Pk Reverse Voltage-Max 25 V 25 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1 16

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