1N6050
vs
JAN1N6050A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
DEFENSE LOGISTICS AGENCY
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
30 V
Clamping Voltage-Max
43.5 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-XALF-W2
O-XALF-W2
JESD-609 Code
e0
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
24 V
25 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
14
7
Package Description
DO-13, 2 PIN
Breakdown Voltage-Max
31.5 V
Breakdown Voltage-Min
28.5 V
Case Connection
ANODE
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Power Dissipation-Max
1 W
Qualification Status
Qualified
Reference Standard
MIL-19500/507D
Technology
AVALANCHE
Compare 1N6050 with alternatives
Compare JAN1N6050A with alternatives