1N6050
vs
1N6050E3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
ST-SEMICONDUCTORS OF INDIANA INC
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
30 V
Clamping Voltage-Max
43.5 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e0
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
24 V
24 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
14
1
Package Description
O-MALF-W2
Breakdown Voltage-Max
33 V
Breakdown Voltage-Min
27 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-202AA
JESD-30 Code
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
LONG FORM
Power Dissipation-Max
1 W
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
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