1N6045AE3 vs JAN1N6045A feature comparison

1N6045AE3 Microsemi Corporation

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JAN1N6045A Semicon Components Inc

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SEMICON COMPONENTS INC
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Category CO2 Kg 8.54
Compliance Temperature Grade Military: -55C to +175C
EU RoHS Version RoHS 2 (2011/65/EU)
Candidate List Date 2018-06-27
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V5.10
Breakdown Voltage-Max 18.9 V 18.9 V
Breakdown Voltage-Min 17.1 V 17.1 V
Breakdown Voltage-Nom 18 V 18 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 25.2 V 25.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 15 V 15 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
JESD-609 Code e0
Qualification Status Not Qualified
Reference Standard MIL-19500/507
Reverse Current-Max 5 µA
Terminal Finish TIN LEAD

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