1N6045AE3
vs
JAN1N6045A
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SEMICON COMPONENTS INC
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +175C
EU RoHS Version
RoHS 2 (2011/65/EU)
Candidate List Date
2018-06-27
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
Breakdown Voltage-Max
18.9 V
18.9 V
Breakdown Voltage-Min
17.1 V
17.1 V
Breakdown Voltage-Nom
18 V
18 V
Case Connection
ISOLATED
CATHODE
Clamping Voltage-Max
25.2 V
25.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-202AA
JESD-30 Code
O-MALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
15 V
15 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
JESD-609 Code
e0
Qualification Status
Not Qualified
Reference Standard
MIL-19500/507
Reverse Current-Max
5 µA
Terminal Finish
TIN LEAD
Compare 1N6045AE3 with alternatives
Compare JAN1N6045A with alternatives