1N6001B vs BZT55C11L1G feature comparison

1N6001B American Power Devices Inc

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BZT55C11L1G Taiwan Semiconductor

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Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer AMERICAN POWER DEVICES INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 18 Ω 20 Ω
Number of Elements 1 1
Operating Temperature-Max 200 °C 175 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 11 V 11 V
Surface Mount NO YES
Technology ZENER ZENER
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 20 1
Rohs Code Yes
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2
JESD-609 Code e3
Knee Impedance-Max 70 Ω
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.1 µA
Reverse Test Voltage 8.2 V
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30

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