1N6000CURE3TR
vs
BZS55B10RXG
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
O-LELF-R2
|
R-PDSO-R2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
TR, 7 INCH; 2000
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-213AA
|
|
| JESD-30 Code |
O-LELF-R2
|
R-PDSO-R2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
10 V
|
10 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
DUAL
|
| Voltage Tol-Max |
2%
|
2%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 1N6000CURE3TR with alternatives
Compare BZS55B10RXG with alternatives