1N6000CURE3 vs BZT55B10 feature comparison

1N6000CURE3 Microsemi Corporation

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BZT55B10 Taiwan Semiconductor

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Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description O-LELF-R2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2 O-GELF-R2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS CERAMIC, GLASS-SEALED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 10 V 10 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 5 mA
Base Number Matches 1 5
Dynamic Impedance-Max 15 Ω
JESD-609 Code e3
Knee Impedance-Max 70 Ω
Moisture Sensitivity Level 1
Reverse Current-Max 0.1 µA
Reverse Test Voltage 7.5 V
Terminal Finish Matte Tin (Sn)

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