1N5921BGTR
vs
BZX85C6V8
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Part Package Code |
DO-41
|
|
| Package Description |
HERMETIC SEALED, GLASS, DO-41, 2 PIN
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-204AL
|
DO-41
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.5 W
|
1.3 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
6.8 V
|
6.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Tol-Max |
5%
|
5.88%
|
| Working Test Current |
55.1 mA
|
35 mA
|
| Base Number Matches |
5
|
10
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| Dynamic Impedance-Max |
|
3.5 Ω
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reverse Current-Max |
|
1 µA
|
| Reverse Test Voltage |
|
4 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Voltage Temp Coeff-Max |
|
4.08 mV/°C
|
|
|
|
Compare 1N5921BGTR with alternatives
Compare BZX85C6V8 with alternatives