1N5822TR
vs
1N5822D1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
80 A
80 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
TIN LEAD
TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Package Description
O-PALF-W2
Additional Feature
FREEWHEELING DIODE, LOW POWER LOSS
Forward Voltage-Max (VF)
0.525 V
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Reverse Current-Max
200 µA
Compare 1N5822TR with alternatives
Compare 1N5822D1 with alternatives