1N5822TR
vs
1N5822-G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
COMCHIP TECHNOLOGY CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-201AD
DO-27
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Pk Forward Current-Max
80 A
80 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Package Description
O-PALF-W2
Additional Feature
LOW POWER LOSS
Forward Voltage-Max (VF)
0.95 V
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
2000 µA
Time@Peak Reflow Temperature-Max (s)
10
Compare 1N5822TR with alternatives
Compare 1N5822-G with alternatives