1N5822-G
vs
1N5822-AP-HF
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
WEITRON TECHNOLOGY CO LTD
|
MICRO COMMERCIAL COMPONENTS CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.525 V
|
0.525 V
|
| Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Base Number Matches |
4
|
1
|
| Package Description |
|
O-PALF-W2
|
| HTS Code |
|
8541.10.00.80
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-201AD
|
| JESD-30 Code |
|
O-PALF-W2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Current-Max |
|
500 µA
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
5
|
|
|
|
Compare 1N5822-G with alternatives
Compare 1N5822-AP-HF with alternatives