1N5822 vs 1N5822-T3 feature comparison

1N5822 Micro Quality Semiconductor Inc

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1N5822-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICRO QUALITY SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
Application VERY FAST RECOVERY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 80 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 40 V 40 V
Reverse Current-Max 2000 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 87 3
Package Description O-PALF-W2
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
JEDEC-95 Code DO-201AD
Moisture Sensitivity Level 1

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