1N5821G
vs
1N5821-AP-HF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.9 V
0.5 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
70 A
80 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
500 µA
500 µA
Reverse Test Voltage
30 V
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
TIN
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
5
Base Number Matches
2
1
Package Description
O-PALF-W2
Moisture Sensitivity Level
1
Compare 1N5821G with alternatives
Compare 1N5821-AP-HF with alternatives