1N5821G vs 1N5821/58 feature comparison

1N5821G Taiwan Semiconductor

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1N5821/58 Vishay Semiconductors

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Non-rep Pk Forward Current-Max 70 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 500 µA
Reverse Test Voltage 30 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 2 1
Part Package Code DO-201AD
Package Description O-PALF-W2
Pin Count 2
Qualification Status Not Qualified

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