1N5821-F
vs
1N5821G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
RECTRON LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
Package Description |
O-PALF-W2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY
|
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
|
Application |
GENERAL PURPOSE
|
EFFICIENCY
|
Breakdown Voltage-Min |
30 V
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.9 V
|
0.9 V
|
JEDEC-95 Code |
DO-201AD
|
DO-201AD
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
JESD-609 Code |
e3
|
e3
|
Non-rep Pk Forward Current-Max |
80 A
|
70 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-65 °C
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
|
Reference Standard |
MIL-STD-202E
|
|
Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
Reverse Current-Max |
20 µA
|
500 µA
|
Reverse Test Voltage |
30 V
|
30 V
|
Surface Mount |
NO
|
NO
|
Technology |
SCHOTTKY
|
SCHOTTKY
|
Terminal Finish |
MATTE TIN
|
TIN
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
1
|
2
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare 1N5821-F with alternatives
Compare 1N5821G with alternatives