1N5821 vs 1N5821-H feature comparison

1N5821 Galaxy Semi-Conductor Co Ltd

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1N5821-H Formosa Microsemi Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE LOW POWER LOSS
Application GENERAL PURPOSE EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.5 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 80 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 2000 µA 500 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1

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