1N5819TR vs UF4006 feature comparison

1N5819TR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

UF4006 Shenzhen Yixinsemi Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SHENZHEN YIXINSEMI ELECTRONICS CO LTD
Reach Compliance Code compliant unknown
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Breakdown Voltage-Min 40 V 600 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 1.7 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 25 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Reference Standard MIL-STD-202 MIL-STD-202E
Rep Pk Reverse Voltage-Max 40 V 600 V
Reverse Current-Max 100 µA 5 µA
Reverse Test Voltage 40 V 600 V
Surface Mount NO NO
Technology SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 45
ECCN Code EAR99