1N5819TR vs JANS1N5819-1 feature comparison

1N5819TR Sangdest Microelectronics (Nanjing) Co Ltd

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JANS1N5819-1 Compensated Devices Inc

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Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD COMPENSATED DEVICES INC
Reach Compliance Code compliant unknown
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS METALLURGICALLY BONDED
Application EFFICIENCY GENERAL PURPOSE
Breakdown Voltage-Min 40 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-XALF-W2
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Reference Standard MIL-STD-202 MIL-19500/586
Rep Pk Reverse Voltage-Max 40 V
Reverse Current-Max 100 µA
Reverse Test Voltage 40 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 6
Package Description HERMETIC SEALED PACKAGE-2
Qualification Status Not Qualified