1N5819-1E3 vs 1N5819-G feature comparison

1N5819-1E3 Microsemi Corporation

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1N5819-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY FREE WHEELING DIODE, LOW POWER LOSS
Application GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.49 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-LALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 45 V 40 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 3
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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