1N5818 vs SB130G-SMA-R feature comparison

1N5818 Galaxy Semi-Conductor Co Ltd

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SB130G-SMA-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.55 V 0.5 V
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount NO YES
Technology SCHOTTKY SCHOTTKY
Base Number Matches 2 1
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Application EFFICIENCY
Breakdown Voltage-Min 30 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 1000 µA
Reverse Test Voltage 30 V
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N5818 with alternatives

Compare SB130G-SMA-R with alternatives