1N5817
vs
1N5817E3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| Additional Feature |
FREE WHEELING DIODE, LOW POWER LOSS
|
HIGH RELIABILITY
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
20 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.75 V
|
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-STD-202
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
| Reverse Current-Max |
100 µA
|
|
| Reverse Test Voltage |
20 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
98
|
2
|
| Package Description |
|
PLASTIC PACKAGE-2
|
| Factory Lead Time |
|
24 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
|
|
|
Compare 1N5817 with alternatives
Compare 1N5817E3 with alternatives