1N5816 vs 1N5816E3 feature comparison

1N5816 Solid State Devices Inc (SSDI)

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1N5816E3 Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SOLID STATE DEVICES INC MICROSEMI CORP
Part Package Code DO-4
Package Description HERMETICALLY SEALED PACKAGE-1 DO-4, 1 PIN
Pin Count 1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.9 V
JEDEC-95 Code DO-4 DO-203AA
JESD-30 Code O-MUPM-D1 O-MUPM-D1
Non-rep Pk Forward Current-Max 80 A 400 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 1 1
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 20 A 20 A
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style POST/STUD MOUNT POST/STUD MOUNT
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 150 V 150 V
Reverse Recovery Time-Max 0.03 µs 0.035 µs
Surface Mount NO NO
Terminal Form SOLDER LUG SOLDER LUG
Terminal Position UPPER UPPER
Base Number Matches 9 1
Additional Feature LEAKAGE CURRENT IS TYPICAL
Case Connection CATHODE
Reverse Current-Max 10 µA

Compare 1N5816 with alternatives

Compare 1N5816E3 with alternatives