1N5806-PBF
vs
JAN1N5806
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DIGITRON SEMICONDUCTORS
|
SENSITRON SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
EFFICIENCY
|
ULTRA FAST RECOVERY
|
| Breakdown Voltage-Min |
160 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.975 V
|
0.875 V
|
| JESD-30 Code |
O-XALF-W2
|
E-LALF-W2
|
| Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
2.5 A
|
2.5 A
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Reverse Test Voltage |
150 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
11
|
| Pbfree Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
|
2
|
| HTS Code |
|
8541.10.00.80
|
| Date Of Intro |
|
1999-06-01
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N5806-PBF with alternatives
Compare JAN1N5806 with alternatives