1N5803
vs
JAN1N5803
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
SUSSEX SEMICONDUCTOR INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
2.5 A
|
1 A
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
15
|
1
|
| Package Description |
|
O-LALF-W2
|
| Pin Count |
|
2
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Application |
|
ULTRA FAST RECOVERY
|
| Breakdown Voltage-Min |
|
80 V
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
O-LALF-W2
|
| JESD-609 Code |
|
e0
|
| Non-rep Pk Forward Current-Max |
|
35 A
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500
|
| Reverse Current-Max |
|
1 µA
|
| Reverse Test Voltage |
|
75 V
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
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