1N5712
vs
JAN1N5712-1
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.075 A
|
0.075 A
|
| Rep Pk Reverse Voltage-Max |
20 V
|
|
| Technology |
SCHOTTKY
|
|
| Base Number Matches |
17
|
4
|
| Package Description |
|
GLAAS, SIMILAR TO DO-35, 2 PIN
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Case Connection |
|
ISOLATED
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/444H
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare JAN1N5712-1 with alternatives