1N5664 vs 1N5664E3 feature comparison

1N5664 New England Semiconductor

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1N5664E3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS TO METAL, DO-13, 2 PIN O-MALF-W2
Reach Compliance Code unknown compliant
Breakdown Voltage-Nom 180 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 246 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-202AA
JESD-30 Code O-MALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 154 V 146 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 13 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 198 V
Breakdown Voltage-Min 162 V

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