1N5655AE3
vs
JAN1N5655A
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
NEW ENGLAND SEMICONDUCTOR
|
| Package Description |
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Breakdown Voltage-Max |
86.1 V
|
86.1 V
|
| Breakdown Voltage-Min |
77.9 V
|
77.9 V
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-202AA
|
DO-13
|
| JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Rep Pk Reverse Voltage-Max |
70.1 V
|
70.1 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
7
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500/500
|
|
|
|
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