1N5649A
vs
1N5648A
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SEMITRON
|
NEW ENGLAND SEMICONDUCTOR
|
| Part Package Code |
DO-13
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
LOW IMPEDANCE
|
|
| Breakdown Voltage-Max |
49.4 V
|
|
| Breakdown Voltage-Min |
44.7 V
|
|
| Breakdown Voltage-Nom |
47 V
|
43 V
|
| Case Connection |
ISOLATED
|
CATHODE
|
| Clamping Voltage-Max |
64.8 V
|
59.3 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-13
|
DO-13
|
| JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
40.2 V
|
36.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
15
|
15
|
| Package Description |
|
HERMETIC SEALED, GLASS TO METAL, DO-13, 2 PIN
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Current-Max |
|
5 µA
|
|
|
|
Compare 1N5649A with alternatives