1N5645 vs SMAJ160CAHE3_A/I feature comparison

1N5645 Semicon Components Inc

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SMAJ160CAHE3_A/I Vishay Intertechnologies

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMICON COMPONENTS INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 33 V 187.5 V
Clamping Voltage-Max 47.7 V 259 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e0 e3
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 27 V 160 V
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) Matte Tin (Sn)
Base Number Matches 10 1
Package Description SMA, 2 PIN
Date Of Intro 2019-02-06
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 197 V
Breakdown Voltage-Min 178 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 300 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3.3 W
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 160 V
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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