1N5635A
vs
MXLC10AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
12.6 V
12.3 V
Breakdown Voltage-Min
11.4 V
11.1 V
Breakdown Voltage-Nom
12 V
Case Connection
ISOLATED
CATHODE
Clamping Voltage-Max
16.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-XALF-W2
O-MALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
10.2 V
10 V
Reverse Current-Max
5 µA
Reverse Test Voltage
10.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
15
1
Part Package Code
DO-13
Package Description
O-MALF-W2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Reference Standard
MIL-19500
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