1N5635
vs
MQLC10E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
LITTELFUSE INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
12 V
|
|
| Clamping Voltage-Max |
17.3 V
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
9.7 V
|
10 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Base Number Matches |
6
|
2
|
| Part Package Code |
|
DO-13
|
| Package Description |
|
O-MALF-W2
|
| Pin Count |
|
2
|
| Breakdown Voltage-Max |
|
13.6 V
|
| Breakdown Voltage-Min |
|
11.1 V
|
| Case Connection |
|
CATHODE
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-202AA
|
| JESD-30 Code |
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
|
1500 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
1 W
|
| Reference Standard |
|
MIL-19500
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N5635 with alternatives
Compare MQLC10E3 with alternatives