1N5631AE3TR
vs
JANTX1N5631A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
SILICON TRANSISTOR CORP
Package Description
O-MALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
8.61 V
8.61 V
Breakdown Voltage-Min
7.79 V
7.79 V
Case Connection
CATHODE
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-202AA
DO-13
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
7.02 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Qualification Status
Not Qualified
Reference Standard
MIL-19500/500
Compare 1N5631AE3TR with alternatives
Compare JANTX1N5631A with alternatives