1N5629 vs 1N5629TR feature comparison

1N5629 Semitronics Corp

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1N5629TR Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMITRONICS CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.48 V 7.48 V
Breakdown Voltage-Min 6.12 V 6.12 V
Breakdown Voltage-Nom 6.8 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 10.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-202AA
JESD-30 Code O-XALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 5.5 V 5.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pbfree Code No
Rohs Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
JESD-609 Code e0
Power Dissipation-Max 1 W
Terminal Finish TIN LEAD

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