1N5629
vs
1N5629E3TR
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SEMITRONICS CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
7.48 V
|
7.48 V
|
| Breakdown Voltage-Min |
6.12 V
|
6.12 V
|
| Breakdown Voltage-Nom |
6.8 V
|
|
| Case Connection |
ISOLATED
|
CATHODE
|
| Clamping Voltage-Max |
10.8 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-13
|
DO-202AA
|
| JESD-30 Code |
O-XALF-W2
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
5.5 V
|
5.5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
O-MALF-W2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max |
|
1 W
|
|
|
|
Compare 1N5629 with alternatives
Compare 1N5629E3TR with alternatives