1N5629 vs 1N5629 feature comparison

1N5629 Semitronics Corp

Buy Now Datasheet

1N5629 Microchip Technology Inc

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMITRONICS CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 7.48 V 7.48 V
Breakdown Voltage-Min 6.12 V 6.12 V
Breakdown Voltage-Nom 6.8 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 10.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-202AA
JESD-30 Code O-XALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 5.5 V 5.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 6
Rohs Code No
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Factory Lead Time 21 Weeks
Samacsys Manufacturer Microchip
JESD-609 Code e0
Power Dissipation-Max 1 W
Terminal Finish TIN LEAD

Compare 1N5629 with alternatives

Compare 1N5629 with alternatives