1N5625
vs
1N5551PBFREE
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SUN WAI ELECTRONIC CO
|
CENTRAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
125 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - with Nickel (Ni) barrier
|
| Base Number Matches |
18
|
1
|
| Package Description |
|
E-LALF-W2
|
| HTS Code |
|
8541.10.00.80
|
| Date Of Intro |
|
2018-01-30
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Application |
|
GENERAL PURPOSE
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
E-LALF-W2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ELLIPTICAL
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reverse Current-Max |
|
1 µA
|
| Reverse Recovery Time-Max |
|
2 µs
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5625 with alternatives
Compare 1N5551PBFREE with alternatives