1N5624TR
vs
BYW82-TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY TELEFUNKEN
VISHAY SEMICONDUCTORS
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
E-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
6 µs
6 µs
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Pbfree Code
Rohs Code
Pin Count
2
JESD-609 Code
e2
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Tin/Silver (Sn/Ag)
Time@Peak Reflow Temperature-Max (s)
30
Compare 1N5624TR with alternatives
Compare BYW82-TR with alternatives