1N5624TR
vs
BYW82-TR
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
E-PALF-W2
E-LALF-W2
JESD-609 Code
e0
e2
Non-rep Pk Forward Current-Max
125 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Silver (Sn/Ag)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Pbfree Code
Yes
Package Description
E-LALF-W2
Pin Count
2
Forward Voltage-Max (VF)
1 V
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Reverse Recovery Time-Max
6 µs
Technology
AVALANCHE
Time@Peak Reflow Temperature-Max (s)
30
Compare 1N5624TR with alternatives
Compare BYW82-TR with alternatives