1N5624-TAP
vs
1N5417-TAP
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY INTERTECHNOLOGY INC
Package Description
E-LALF-W2
HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
METALLURGICALLY BONDED
Application
GENERAL PURPOSE
FAST SOFT RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.5 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Recovery Time-Max
6 µs
0.1 µs
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
2
1
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
JESD-609 Code
e2
Reverse Current-Max
1 µA
Terminal Finish
TIN SILVER
Compare 1N5624-TAP with alternatives
Compare 1N5417-TAP with alternatives